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Secondary Ion Mass Spectrometry (SIMS)

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Secondary ion mass spectrometry


Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among elements sputtered from different materials, comparison against well-calibrated standards is necessary to achieve accurate quantitative results. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.

Read more about 'Secondary ion mass spectrometry' at: Wikipedia

Wikipedia contributors. "Secondary ion mass spectrometry." Wikipedia, The Free Encyclopedia. Wikipedia, The Free Encyclopedia, April 22, 2024.


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